Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., and Leighton, C. Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study. Journal of Applied Physics 120.5 Web. doi:10.1063/1.4960343.

Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., & Leighton, C. Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study. Journal of Applied Physics, 120 (5). https://doi.org/10.1063/1.4960343

Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., and Leighton, C. "Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study". Journal of Applied Physics 120 (5). United States: American Institute of Physics. https://doi.org/10.1063/1.4960343. https://par.nsf.gov/biblio/10052161.

@article{osti_10052161,
place = {United States}, title = {Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study}, url = {https://par.nsf.gov/biblio/10052161}, DOI = {10.1063/1.4960343}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {120}, number = {5}, publisher = {American Institute of Physics}, author = {Ambwani, P. and Xu, P. and Haugstad, G. and Jeong, J. S. and Deng, R. and Mkhoyan, K. A. and Jalan, B. and Leighton, C.}, }