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Title: Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
NSF-PAR ID:
10052398
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
105
Issue:
22
ISSN:
0003-6951
Page Range / eLocation ID:
Article No. 222101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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