Epitaxial growth and electronic properties of mixed valence YbAl 3 thin films
- NSF-PAR ID:
- 10052441
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 120
- Issue:
- 3
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 035105
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation