Powell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., and Buonassisi, T. Exceptional gettering response of epitaxially grown kerfless silicon. Journal of Applied Physics 119.6 Web. doi:10.1063/1.4940947.

Powell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., & Buonassisi, T. Exceptional gettering response of epitaxially grown kerfless silicon. Journal of Applied Physics, 119 (6). https://doi.org/10.1063/1.4940947

Powell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., and Buonassisi, T. "Exceptional gettering response of epitaxially grown kerfless silicon". Journal of Applied Physics 119 (6). United States: American Institute of Physics. https://doi.org/10.1063/1.4940947. https://par.nsf.gov/biblio/10052501.

@article{osti_10052501,
place = {United States}, title = {Exceptional gettering response of epitaxially grown kerfless silicon}, url = {https://par.nsf.gov/biblio/10052501}, DOI = {10.1063/1.4940947}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {119}, number = {6}, publisher = {American Institute of Physics}, author = {Powell, D. M. and Markevich, V. P. and Hofstetter, J. and Jensen, M. A. and Morishige, A. E. and Castellanos, S. and Lai, B. and Peaker, A. R. and Buonassisi, T.}, }