Jiang, R., Shen, X., Chen, J., Duan, G. X., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Kaun, S. W., Kyle, E. C., Speck, J. S., and Pantelides, S. T. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors. Applied Physics Letters 109.2 Web. doi:10.1063/1.4958706.

Jiang, R., Shen, X., Chen, J., Duan, G. X., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Kaun, S. W., Kyle, E. C., Speck, J. S., & Pantelides, S. T. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 109 (2). https://doi.org/10.1063/1.4958706

Jiang, R., Shen, X., Chen, J., Duan, G. X., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Kaun, S. W., Kyle, E. C., Speck, J. S., and Pantelides, S. T. "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors". Applied Physics Letters 109 (2). United States: American Institute of Physics. https://doi.org/10.1063/1.4958706. https://par.nsf.gov/biblio/10052580.

@article{osti_10052580,
place = {United States}, title = {Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors}, url = {https://par.nsf.gov/biblio/10052580}, DOI = {10.1063/1.4958706}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {109}, number = {2}, publisher = {American Institute of Physics}, author = {Jiang, R. and Shen, X. and Chen, J. and Duan, G. X. and Zhang, E. X. and Fleetwood, D. M. and Schrimpf, R. D. and Kaun, S. W. and Kyle, E. C. and Speck, J. S. and Pantelides, S. T.}, }