Almasi, H., Xu, M., Xu, Y., Newhouse-Illige, T., and Wang, W. G. Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions. Applied Physics Letters 109.3 Web. doi:10.1063/1.4958732.
Almasi, H., Xu, M., Xu, Y., Newhouse-Illige, T., & Wang, W. G. Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions. Applied Physics Letters, 109 (3). https://doi.org/10.1063/1.4958732
Almasi, H., Xu, M., Xu, Y., Newhouse-Illige, T., and Wang, W. G.
"Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions". Applied Physics Letters 109 (3). United States: American Institute of Physics. https://doi.org/10.1063/1.4958732.https://par.nsf.gov/biblio/10052596.
@article{osti_10052596,
place = {United States},
title = {Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions},
url = {https://par.nsf.gov/biblio/10052596},
DOI = {10.1063/1.4958732},
abstractNote = {Not Available},
journal = {Applied Physics Letters},
volume = {109},
number = {3},
publisher = {American Institute of Physics},
author = {Almasi, H. and Xu, M. and Xu, Y. and Newhouse-Illige, T. and Wang, W. G.},
}
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