High-density InAs/GaAs 1− x Sb x quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
- NSF-PAR ID:
- 10053082
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 119
- Issue:
- 11
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 114301
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation