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Title: Optical characteristics of p -type GaAs-based semiconductors towards applications in photoemission infrared detectors
Authors:
 ;  ;  ;  ;  ;  
Publication Date:
NSF-PAR ID:
10053089
Journal Name:
Journal of Applied Physics
Volume:
119
Issue:
10
Page Range or eLocation-ID:
105304
ISSN:
0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
National Science Foundation
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