Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. Journal of Applied Physics 119.19 Web. doi:10.1063/1.4948954.

Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., & Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. Journal of Applied Physics, 119 (19). https://doi.org/10.1063/1.4948954

Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. "Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells". Journal of Applied Physics 119 (19). United States: American Institute of Physics. https://doi.org/10.1063/1.4948954. https://par.nsf.gov/biblio/10053127.

@article{osti_10053127,
place = {United States}, title = {Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells}, url = {https://par.nsf.gov/biblio/10053127}, DOI = {10.1063/1.4948954}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {119}, number = {19}, publisher = {American Institute of Physics}, author = {Sellers, D. G. and Chen, E. Y. and Polly, S. J. and Hubbard, S. M. and Doty, M. F.}, }