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Title: Charge neutral MoS2 field effect transistors through oxygen plasma treatment
NSF-PAR ID:
10053213
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
120
Issue:
19
ISSN:
0021-8979
Page Range / eLocation ID:
195702
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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