Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, and Rajan, Siddharth. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. Applied Physics Letters 112.7 Web. doi:10.1063/1.5017045.

Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, & Rajan, Siddharth. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. Applied Physics Letters, 112 (7). https://doi.org/10.1063/1.5017045

Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, and Rajan, Siddharth. "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency". Applied Physics Letters 112 (7). United States: American Institute of Physics. https://doi.org/10.1063/1.5017045. https://par.nsf.gov/biblio/10053233.

@article{osti_10053233,
place = {United States}, title = {Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency}, url = {https://par.nsf.gov/biblio/10053233}, DOI = {10.1063/1.5017045}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {112}, number = {7}, publisher = {American Institute of Physics}, author = {Zhang, Yuewei and Jamal-Eddine, Zane and Akyol, Fatih and Bajaj, Sanyam and Johnson, Jared M. and Calderon, Gabriel and Allerman, Andrew A. and Moseley, Michael W. and Armstrong, Andrew M. and Hwang, Jinwoo and Rajan, Siddharth}, }