The presence of surface and grain boundary defects in organic–inorganic halide perovskite films can be detrimental to both the performance and operational stability of perovskite solar cells (PSCs). Here, the effect of chloride additives is studied on the bulk and surface defects of the mixed cation and halide PSCs. It is found that using an antisolvent technique, the perovskite film is divided into two layers, i.e., a bottom layer with large grains and a thin capping layer with small grains. The addition of formamidinium chloride (FACl) into the precursor solution removes the small‐grained perovskite capping layer and suppresses the formation of bulk and surface defects, providing a perovskite film with enhanced crystallinity and large grain size of over 1 µm. Time‐resolved photoluminescence measurements show longer lifetimes for perovskite films modified by FACl and subsequently passivated by 1‐adamantylamine hydrochloride as compared to the reference sample. Impedance spectroscopy measurements show that these treatments reduce the recombination in the PSCs, leading to a champion device with power conversion efficiency (PCE) of 21.2%, an open circuit voltage of 1152 mV and negligible hysteresis. The Cl treated PSC also shows improved operational stability with only 12% PCE loss after 700 h under continuous illumination.
The recent rapid increase in efficiency of organic–inorganic perovskite solar cells (PSCs) has resulted in a need to develop a clear understanding of their stability and working mechanisms. In particular, it has been suggested that ion migration contributes to the commonly observed hysteresis in the current–voltage measurements of PSCs, but the rate of ion migration and its effects on the electronic properties of PSCs remain to be addressed. In this work, electron‐beam‐induced current (EBIC) is used to directly map changes in local current extraction in organic–inorganic PSCs under applied voltage. By combining EBIC mapping, standard current–voltage measurements, and external quantum efficiency measurements, it is shown that between the two potential roles that point defects play in device enhancement under voltage biasing, the effects caused by defect‐mediated ion migration outweigh the effects from the filling of trap states caused by these defects. Evidence is also provided for ion migration preferentially at local features such as extended defects. The measured timescale of tens of seconds for migration across a full device imply that ion migration contributes indirectly to the electronic capacitance of perovskite devices through interface charging.
more » « less- PAR ID:
- 10053448
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Energy Materials
- Volume:
- 8
- Issue:
- 18
- ISSN:
- 1614-6832
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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