Barr, Jordan A., Lin, Fang-Yin, Ashton, Michael, Hennig, Richard G., and Sinnott, Susan B. High-throughput density functional calculations to optimize properties and interfacial chemistry of piezoelectric materials. Physical Review Materials 2.2 Web. doi:10.1103/PhysRevMaterials.2.025002.
Barr, Jordan A., Lin, Fang-Yin, Ashton, Michael, Hennig, Richard G., & Sinnott, Susan B. High-throughput density functional calculations to optimize properties and interfacial chemistry of piezoelectric materials. Physical Review Materials, 2 (2). https://doi.org/10.1103/PhysRevMaterials.2.025002
Barr, Jordan A., Lin, Fang-Yin, Ashton, Michael, Hennig, Richard G., and Sinnott, Susan B.
"High-throughput density functional calculations to optimize properties and interfacial chemistry of piezoelectric materials". Physical Review Materials 2 (2). United States: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.2.025002.https://par.nsf.gov/biblio/10053846.
@article{osti_10053846,
place = {United States},
title = {High-throughput density functional calculations to optimize properties and interfacial chemistry of piezoelectric materials},
url = {https://par.nsf.gov/biblio/10053846},
DOI = {10.1103/PhysRevMaterials.2.025002},
abstractNote = {Not Available},
journal = {Physical Review Materials},
volume = {2},
number = {2},
publisher = {American Physical Society},
author = {Barr, Jordan A. and Lin, Fang-Yin and Ashton, Michael and Hennig, Richard G. and Sinnott, Susan B.},
}
Warning: Leaving National Science Foundation Website
You are now leaving the National Science Foundation website to go to a non-government website.
Website:
NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of
the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.