Geng, Xuewen, Duan, Barrett K, Grismer, Dane A, Zhao, Liancheng, and Bohn, Paul W. Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN. Retrieved from https://par.nsf.gov/biblio/10054359. Semiconductor Science and Technology 28.6 Web. doi:10.1088/0268-1242/28/6/065001.

Geng, Xuewen, Duan, Barrett K, Grismer, Dane A, Zhao, Liancheng, & Bohn, Paul W. Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN. Semiconductor Science and Technology, 28 (6). Retrieved from https://par.nsf.gov/biblio/10054359. https://doi.org/10.1088/0268-1242/28/6/065001

Geng, Xuewen, Duan, Barrett K, Grismer, Dane A, Zhao, Liancheng, and Bohn, Paul W. "Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN". Semiconductor Science and Technology 28 (6). Country unknown/Code not available. https://doi.org/10.1088/0268-1242/28/6/065001. https://par.nsf.gov/biblio/10054359.

@article{osti_10054359,
place = {Country unknown/Code not available}, title = {Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN}, url = {https://par.nsf.gov/biblio/10054359}, DOI = {10.1088/0268-1242/28/6/065001}, abstractNote = {}, journal = {Semiconductor Science and Technology}, volume = {28}, number = {6}, author = {Geng, Xuewen and Duan, Barrett K and Grismer, Dane A and Zhao, Liancheng and Bohn, Paul W}, }