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Title: Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond
Abstract

Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively coupled plasma reactive ion etcher is presented, which selectively reveals desired crystal planes in monocrystalline diamond by controlling the etching conditions. Using this principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half‐tapering angle up to 21° is achieved, the highest angle reported in the literature, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of a crystallographic orientation dependent reactive ion etching principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for the structuring and patterning of other single crystal materials as well.

 
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NSF-PAR ID:
10054592
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Materials
Volume:
30
Issue:
11
ISSN:
0935-9648
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    High quality diamond film with minimum surface roughness and ~93% oriented grains along (110) crystallographic direction is grown on Si substrate using a thin 5 to 20 nm nickel layer.

    A detailed report on the formation of different phases of nickel silicide, its stability with different temperature, and its role for diamond film texturing at HFCVD growth condition is presented.

    A diamond growth model on Si substrate with Ni interlayer to grow high quality-oriented diamond film is established.

     
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