Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
- Award ID(s):
- 1711967
- NSF-PAR ID:
- 10055821
- Date Published:
- Journal Name:
- Nanotechnology
- Volume:
- 29
- Issue:
- 8
- ISSN:
- 0957-4484
- Page Range / eLocation ID:
- 085601
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Journal Article:
- https://doi.org/10.1088/1361-6528/aaa52e
