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Title: Reducing Trap States in Printed Indium Zinc Oxide Transistors by Doping with Benzyl Viologen
Award ID(s):
1635729
PAR ID:
10056557
Author(s) / Creator(s):
 ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Electronic Materials
Volume:
4
Issue:
5
ISSN:
2199-160X
Page Range / eLocation ID:
1700631
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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