Ferdous, Rifat, Chan, Kok W., Veldhorst, Menno, Hwang, J. C., Yang, C. H., Sahasrabudhe, Harshad, Klimeck, Gerhard, Morello, Andrea, Dzurak, Andrew S., and Rahman, Rajib. Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability. Physical Review B 97.24 Web. doi:10.1103/PhysRevB.97.241401.

Ferdous, Rifat, Chan, Kok W., Veldhorst, Menno, Hwang, J. C., Yang, C. H., Sahasrabudhe, Harshad, Klimeck, Gerhard, Morello, Andrea, Dzurak, Andrew S., & Rahman, Rajib. Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability. Physical Review B, 97 (24). https://doi.org/10.1103/PhysRevB.97.241401

Ferdous, Rifat, Chan, Kok W., Veldhorst, Menno, Hwang, J. C., Yang, C. H., Sahasrabudhe, Harshad, Klimeck, Gerhard, Morello, Andrea, Dzurak, Andrew S., and Rahman, Rajib. "Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability". Physical Review B 97 (24). United States: American Physical Society. https://doi.org/10.1103/PhysRevB.97.241401. https://par.nsf.gov/biblio/10059043.

@article{osti_10059043,
place = {United States}, title = {Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability}, url = {https://par.nsf.gov/biblio/10059043}, DOI = {10.1103/PhysRevB.97.241401}, abstractNote = {Not Available}, journal = {Physical Review B}, volume = {97}, number = {24}, publisher = {American Physical Society}, author = {Ferdous, Rifat and Chan, Kok W. and Veldhorst, Menno and Hwang, J. C. and Yang, C. H. and Sahasrabudhe, Harshad and Klimeck, Gerhard and Morello, Andrea and Dzurak, Andrew S. and Rahman, Rajib}, }