Shojaei, B., McFadden, A. P., Pendharkar, M., Lee, J. S., Flatté, M. E., and Palmstrøm, C. J. Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Physical Review Materials 2.6 Web. doi:10.1103/PhysRevMaterials.2.064603.
Shojaei, B., McFadden, A. P., Pendharkar, M., Lee, J. S., Flatté, M. E., & Palmstrøm, C. J. Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Physical Review Materials, 2 (6). https://doi.org/10.1103/PhysRevMaterials.2.064603
Shojaei, B., McFadden, A. P., Pendharkar, M., Lee, J. S., Flatté, M. E., and Palmstrøm, C. J.
"Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures". Physical Review Materials 2 (6). United States: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.2.064603.https://par.nsf.gov/biblio/10059964.
@article{osti_10059964,
place = {United States},
title = {Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures},
url = {https://par.nsf.gov/biblio/10059964},
DOI = {10.1103/PhysRevMaterials.2.064603},
abstractNote = {Not Available},
journal = {Physical Review Materials},
volume = {2},
number = {6},
publisher = {American Physical Society},
author = {Shojaei, B. and McFadden, A. P. and Pendharkar, M. and Lee, J. S. and Flatté, M. E. and Palmstrøm, C. J.},
}
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