The newly discovered graded photonic super-crystal (GPSC) with a large size of unit cell can have novel optical properties that have not been explored. The unit super-cell in the GPSC can be designed to be large or small and thus the GPSC can have no photonic band gap or several gaps. The photonic band structures in Si GPSC can help predict the light absorption in Si. Photonic resonance modes help enhance the absorption of light in silicon; however, photonic band gaps decrease the absorption for light with a large incident angle. The Si device patterned in GPSC with a unit super-cell of 6a × 6a (a is a lattice constant in traditional photonic crystal) has a broadband high absorption with strong incident-angular dependence. The device with the unit super-cell of 12a × 12a has relatively low light absorption with weak incident-angle dependence. The Si GPSC with a unit super-cell of 8a × 8a combines both advantages of broadband high absorption and weak dependence of absorption on the incident angle. 
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                            Photoluminescence Imaging vs. Transient Photoconductance Characterization at High Injection: Case of mc-Si
                        
                    
    
            Band-to-band photoluminescence (PL) imaging is one of the experimental techniques widely used to assess non-radiative recombination rates at a fixed incident light intensity. Minority carrier lifetimes in semiconductors such as mc-Si are also affected by optical injection levels. These can be measured by transient photoconductance (TPC). In this paper, PL imaging of shunts and TPC lifetime results for incident intensities of up to 50 Suns are compared for multiple samples of mc-Si. 
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                            - Award ID(s):
- 1505377
- PAR ID:
- 10061081
- Date Published:
- Journal Name:
- 45th IEEE-PVSC
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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