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Title: Trapping Effects in Si -Doped -Ga 2 O 3 MESFETs on an Fe-Doped -Ga 2 O 3 Substrate
PAR ID:
10062311
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
Institute of Electrical and Electronics Engineers
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
39
Issue:
7
ISSN:
0741-3106
Page Range / eLocation ID:
p. 1042-1045
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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