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			<titleStmt><title level='a'>Studies of spin related processes in fullerene C &lt;sub&gt;60&lt;/sub&gt; devices</title></titleStmt>
			<publicationStmt>
				<publisher></publisher>
				<date>01/01/2018</date>
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				<bibl> 
					<idno type="par_id">10064591</idno>
					<idno type="doi">10.1039/C7TC05086K</idno>
					<title level='j'>Journal of Materials Chemistry C</title>
<idno>2050-7526</idno>
<biblScope unit="volume">6</biblScope>
<biblScope unit="issue">14</biblScope>					

					<author>Haoliang Liu</author><author>Jingying Wang</author><author>Matthew Groesbeck</author><author>Xin Pan</author><author>Chuang Zhang</author><author>Z. Valy Vardeny</author>
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			<abstract><ab><![CDATA[We have investigated spin related processes in fullerene C              60              devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C              60              -based diodes; spin polarized carrier injection in C              60              -based spin-valves; and pure spin current generation in NiFe/C              60              /Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C              60              plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C              60              diodes are dominated by the difference in the              g              -values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C              60              spin-valve devices, where spin polarized holes are injected into the C              60              interlayer. In addition, using the technique of spin-pumping in NiFe/C              60              /Pt trilayer devices with various C              60              interlayer thicknesses we determined the spin diffusion length in C              60              films to be 13 ± 2 nm at room temperature.]]></ab></abstract>
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