skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Models of Surface Morphology and Electronic Structure of Indium Oxide and Indium Tin Oxide for Several Surface Hydroxylation Levels
Award ID(s):
1742807
PAR ID:
10066603
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
The Journal of Physical Chemistry C
Volume:
122
Issue:
1
ISSN:
1932-7447
Page Range / eLocation ID:
584 to 595
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. The magnetic-field–tuned superconductor-to-insulator transition was studied in a hybrid system of superconducting indium islands, deposited on an indium oxide (InOx) thin film, which exhibits global superconductivity at low magnetic fields. Vacuum annealing was used to tune the conductivity of the InOx film, thereby tuning the inergrain coupling and the nature of the transition. The hybrid system exhibits a “giant” magnetoresistance above the magnetic-field–tuned superconductor-to-insulator transition (H-SIT), with critical behavior similar to that of uniform InOx films but at much lower magnetic fields, that manifests the duality between Cooper pairs and vortices. A key feature of this hybrid system is the separation between the quantum criticality and the onset of nonequilibrium behavior. 
    more » « less