Wang, Zheng, Gaskell, Anthony Arthur, Dopita, Milan, Kriegner, Dominik, Tasneem, Nujhat, Mack, Jerry, Mukherjee, Niloy, Karim, Zia, and Khan, Asif Islam. Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals. Retrieved from https://par.nsf.gov/biblio/10074096. Applied Physics Letters 112.22 Web. doi:10.1063/1.5037185.

Wang, Zheng, Gaskell, Anthony Arthur, Dopita, Milan, Kriegner, Dominik, Tasneem, Nujhat, Mack, Jerry, Mukherjee, Niloy, Karim, Zia, & Khan, Asif Islam. Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals. Applied Physics Letters, 112 (22). Retrieved from https://par.nsf.gov/biblio/10074096. https://doi.org/10.1063/1.5037185

Wang, Zheng, Gaskell, Anthony Arthur, Dopita, Milan, Kriegner, Dominik, Tasneem, Nujhat, Mack, Jerry, Mukherjee, Niloy, Karim, Zia, and Khan, Asif Islam. "Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals". Applied Physics Letters 112 (22). Country unknown/Code not available. https://doi.org/10.1063/1.5037185. https://par.nsf.gov/biblio/10074096.

@article{osti_10074096,
place = {Country unknown/Code not available}, title = {Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals}, url = {https://par.nsf.gov/biblio/10074096}, DOI = {10.1063/1.5037185}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {112}, number = {22}, author = {Wang, Zheng and Gaskell, Anthony Arthur and Dopita, Milan and Kriegner, Dominik and Tasneem, Nujhat and Mack, Jerry and Mukherjee, Niloy and Karim, Zia and Khan, Asif Islam}, }