Monavarian, M., Rashidi, A., Aragon, A. A., Nami, M., Oh, S. H., DenBaars, S. P., and Feezell, D. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes. Applied Physics Letters 112.19 Web. doi:10.1063/1.5032115.

Monavarian, M., Rashidi, A., Aragon, A. A., Nami, M., Oh, S. H., DenBaars, S. P., & Feezell, D. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes. Applied Physics Letters, 112 (19). https://doi.org/10.1063/1.5032115

Monavarian, M., Rashidi, A., Aragon, A. A., Nami, M., Oh, S. H., DenBaars, S. P., and Feezell, D. "Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes". Applied Physics Letters 112 (19). United States: American Institute of Physics. https://doi.org/10.1063/1.5032115. https://par.nsf.gov/biblio/10074871.

@article{osti_10074871,
place = {United States}, title = {Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes}, url = {https://par.nsf.gov/biblio/10074871}, DOI = {10.1063/1.5032115}, abstractNote = {Not Available}, journal = {Applied Physics Letters}, volume = {112}, number = {19}, publisher = {American Institute of Physics}, author = {Monavarian, M. and Rashidi, A. and Aragon, A. A. and Nami, M. and Oh, S. H. and DenBaars, S. P. and Feezell, D.}, }