Rivera, Manuel, Velázquez, Rafael, Aldalbahi, Ali, Zhou, Andrew F, and Feng, Peter X. UV photodetector based on energy bandgap shifted hexagonal boron nitride nanosheets for high-temperature environments. Retrieved from https://par.nsf.gov/biblio/10075088. Journal of Physics D: Applied Physics 51.4 Web. doi:10.1088/1361-6463/aa9fa8.

Rivera, Manuel, Velázquez, Rafael, Aldalbahi, Ali, Zhou, Andrew F, & Feng, Peter X. UV photodetector based on energy bandgap shifted hexagonal boron nitride nanosheets for high-temperature environments. Journal of Physics D: Applied Physics, 51 (4). Retrieved from https://par.nsf.gov/biblio/10075088. https://doi.org/10.1088/1361-6463/aa9fa8

Rivera, Manuel, Velázquez, Rafael, Aldalbahi, Ali, Zhou, Andrew F, and Feng, Peter X. "UV photodetector based on energy bandgap shifted hexagonal boron nitride nanosheets for high-temperature environments". Journal of Physics D: Applied Physics 51 (4). Country unknown/Code not available. https://doi.org/10.1088/1361-6463/aa9fa8. https://par.nsf.gov/biblio/10075088.

@article{osti_10075088,
place = {Country unknown/Code not available}, title = {UV photodetector based on energy bandgap shifted hexagonal boron nitride nanosheets for high-temperature environments}, url = {https://par.nsf.gov/biblio/10075088}, DOI = {10.1088/1361-6463/aa9fa8}, abstractNote = {}, journal = {Journal of Physics D: Applied Physics}, volume = {51}, number = {4}, author = {Rivera, Manuel and Velázquez, Rafael and Aldalbahi, Ali and Zhou, Andrew F and Feng, Peter X}, }