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Title: Breakdown mechanism in 1 kA/cm 2 and 960 V E-mode β -Ga 2 O 3 vertical transistors
NSF-PAR ID:
10075482
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
113
Issue:
12
ISSN:
0003-6951
Page Range / eLocation ID:
122103
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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