Highly crystalline thin films in organic semiconductors are important for applications in high‐performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution‐processed blends of 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) small molecule and indacenodithiophene‐benzothiadiazole (C16IDT‐BT) conjugated polymer, and (2) large‐area vacuum evaporated polycrystalline thin films of rubrene (C42H28). It is discovered that, despite the high field‐effect mobilities of up to 6 cm2V−1s−1and the evidence of a delocalized band‐like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor α < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto‐transport properties of organic semiconductor thin films.
Hybrid organic–inorganic perovskites have recently gained immense attention due to their unique optical and electronic properties and low production cost, which make them promising candidates for a wide range of optoelectronic devices. But unlike most other technologies, the breakthroughs witnessed in hybrid perovskite optoelectronics have outgrown the basic understanding of the fundamental material properties. For example, the effectiveness of charge transport in relation to film microstructure and processing has remained elusive. In this study, field‐effect transistors are fabricated and evaluated in order to probe the nature and dynamics of charge transport in thin films of methylammonium lead iodide. A dramatic improvement is shown in the electrical properties upon solvent vapor annealing. The resulting devices exhibit ambipolar transport, with room‐temperature hole and electron mobilities exceeding 10 cm2V−1s−1. The remarkable enhancement in charge carrier mobility is attributed to the increase in the grain size and passivation of grain boundaries via the formation of solvent complexes.
more » « less- PAR ID:
- 10075774
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 4
- Issue:
- 12
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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