Lv, Jian, Xu, Meiling, Lin, Shiru, Shao, Xuecheng, Zhang, Xinyu, Liu, Yanhui, Wang, Yanchao, Chen, Zhongfang, and Ma, Yanming. Direct-gap semiconducting tri-layer silicene with 29% photovoltaic efficiency. Retrieved from https://par.nsf.gov/biblio/10076511. Nano Energy 51.C Web. doi:10.1016/j.nanoen.2018.06.079.

Lv, Jian, Xu, Meiling, Lin, Shiru, Shao, Xuecheng, Zhang, Xinyu, Liu, Yanhui, Wang, Yanchao, Chen, Zhongfang, & Ma, Yanming. Direct-gap semiconducting tri-layer silicene with 29% photovoltaic efficiency. Nano Energy, 51 (C). Retrieved from https://par.nsf.gov/biblio/10076511. https://doi.org/10.1016/j.nanoen.2018.06.079

Lv, Jian, Xu, Meiling, Lin, Shiru, Shao, Xuecheng, Zhang, Xinyu, Liu, Yanhui, Wang, Yanchao, Chen, Zhongfang, and Ma, Yanming. "Direct-gap semiconducting tri-layer silicene with 29% photovoltaic efficiency". Nano Energy 51 (C). Country unknown/Code not available. https://doi.org/10.1016/j.nanoen.2018.06.079. https://par.nsf.gov/biblio/10076511.

@article{osti_10076511,
place = {Country unknown/Code not available}, title = {Direct-gap semiconducting tri-layer silicene with 29% photovoltaic efficiency}, url = {https://par.nsf.gov/biblio/10076511}, DOI = {10.1016/j.nanoen.2018.06.079}, abstractNote = {}, journal = {Nano Energy}, volume = {51}, number = {C}, author = {Lv, Jian and Xu, Meiling and Lin, Shiru and Shao, Xuecheng and Zhang, Xinyu and Liu, Yanhui and Wang, Yanchao and Chen, Zhongfang and Ma, Yanming}, }