Guo, Dezhou, Song, Shuangxi, Luo, Ruichun, Goddard, William A., Chen, Mingwei, Reddy, Kolan Madhav, and An, Qi. Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide. Physical Review Letters 121.14 Web. doi:10.1103/PhysRevLett.121.145504.

Guo, Dezhou, Song, Shuangxi, Luo, Ruichun, Goddard, William A., Chen, Mingwei, Reddy, Kolan Madhav, & An, Qi. Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide. Physical Review Letters, 121 (14). https://doi.org/10.1103/PhysRevLett.121.145504

Guo, Dezhou, Song, Shuangxi, Luo, Ruichun, Goddard, William A., Chen, Mingwei, Reddy, Kolan Madhav, and An, Qi. "Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide". Physical Review Letters 121 (14). United States: American Physical Society. https://doi.org/10.1103/PhysRevLett.121.145504. https://par.nsf.gov/biblio/10077291.

@article{osti_10077291,
place = {United States}, title = {Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide}, url = {https://par.nsf.gov/biblio/10077291}, DOI = {10.1103/PhysRevLett.121.145504}, abstractNote = {Not Available}, journal = {Physical Review Letters}, volume = {121}, number = {14}, publisher = {American Physical Society}, author = {Guo, Dezhou and Song, Shuangxi and Luo, Ruichun and Goddard, William A. and Chen, Mingwei and Reddy, Kolan Madhav and An, Qi}, }