The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT), such as emergent electronic orders and pseudogaps, that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena is the difficulty in accessing doping levels near the parent state. The
A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7(0 ≤
- NSF-PAR ID:
- 10077301
- Publisher / Repository:
- Proceedings of the National Academy of Sciences
- Date Published:
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 115
- Issue:
- 44
- ISSN:
- 0027-8424
- Page Range / eLocation ID:
- p. 11198-11202
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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