Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., and Ghosh, Avik W. Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance. Journal of Applied Physics 124.15 Web. doi:10.1063/1.5044434.

Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., & Ghosh, Avik W. Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance. Journal of Applied Physics, 124 (15). https://doi.org/10.1063/1.5044434

Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., and Ghosh, Avik W. "Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance". Journal of Applied Physics 124 (15). United States: American Institute of Physics. https://doi.org/10.1063/1.5044434. https://par.nsf.gov/biblio/10077491.

@article{osti_10077491,
place = {United States}, title = {Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance}, url = {https://par.nsf.gov/biblio/10077491}, DOI = {10.1063/1.5044434}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {124}, number = {15}, publisher = {American Institute of Physics}, author = {Ahmed, Sheikh Z. and Tan, Yaohua and Truesdell, Daniel S. and Calhoun, Benton H. and Ghosh, Avik W.}, }