The integration of dissimilar materials into heterostructures is a mainstay of modern materials science and technology. An alternative strategy of joining components with different electronic structure involves mixed‐dimensional heterostructures, that is, architectures consisting of elements with different dimensionality, for example, 1D nanowires and 2D plates. Combining the two approaches can result in hybrid architectures in which both the dimensionality and composition vary between the components, potentially offering even larger contrast between their electronic structures. To date, realizing such heteromaterials mixed‐dimensional heterostructures has required sequential multi‐step growth processes. Here, it is shown that differences in precursor incorporation rates between vapor–liquid–solid growth of 1D nanowires and direct vapor–solid growth of 2D plates attached to the wires can be harnessed to synthesize heteromaterials mixed‐dimensional heterostructures in a single‐step growth process. Exposure to mixed GeS and GeSe vapors produces GeS1−
Mixed‐dimensional (0D, 1D, and 3D) heterostructures based on 2D layered materials have been proven as a promising candidate for future nanoelectronics and optoelectronics applications. In this work, it is demonstrated that 1D atomic chain based Se nanoplates (NPs) can be epitaxially grown on monolayer ReS2by a chemical transport reaction, thereby creating an interesting mixed‐dimensional Se/ReS2heterostructure. A unique epitaxial relationship is observed with the (110) planes of the Se NPs parallel to the corresponding ReS2(010) planes. Experimental and theoretical studies reveal that the Se NPs could conjugate with underlying monolayer ReS2via strong chemical hybridization at heterointerface, which is expected to originate from the intrinsic defects of ReS2. Remarkably, photodetectors based on Se/ReS2heterostructures exhibit ultrahigh detectivity of up to 8 × 1012Jones, and also show a fast response time of less than 10 ms. These results illustrate the great advantage of directly integrated 1D Se based nanostructure on planar semiconducting ReS2films for optoelectronic applications. It opens up a feasible way to obtain mixed‐dimensional heterostructures with atomic interfacial contact by epitaxial growth.
more » « less- PAR ID:
- 10078114
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 28
- Issue:
- 48
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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