Microwave photocurrent from the edge states of InAs/GaInSb bilayers (Journal Article) | NSF PAGES

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Citation Details

Microwave photocurrent from the edge states of InAs/GaInSb bilayers

NSF-PAR ID:: 10081167

Author(s) / Creator(s):: Zhang, Jie; Li, Tingxin; Du, Rui-Rui; Sullivan, Gerard

Publisher / Repository:: American Physical Society

Date Published:: 2018-12-10

Journal Name:: Physical Review B

Volume:: 98

Issue:: 24

ISSN:: 2469-9950; PRBMDO

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Journal Article:
https://doi.org/10.1103/PhysRevB.98.241301