Rose, B. C., Thiering, G., Tyryshkin, A. M., Edmonds, A. M., Markham, M. L., Gali, A., Lyon, S. A., and de Leon, N. P. Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond. Physical Review B 98.23 Web. doi:10.1103/PhysRevB.98.235140.

Rose, B. C., Thiering, G., Tyryshkin, A. M., Edmonds, A. M., Markham, M. L., Gali, A., Lyon, S. A., & de Leon, N. P. Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond. Physical Review B, 98 (23). https://doi.org/10.1103/PhysRevB.98.235140

Rose, B. C., Thiering, G., Tyryshkin, A. M., Edmonds, A. M., Markham, M. L., Gali, A., Lyon, S. A., and de Leon, N. P. "Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond". Physical Review B 98 (23). Japan: American Physical Society. https://doi.org/10.1103/PhysRevB.98.235140. https://par.nsf.gov/biblio/10081936.

@article{osti_10081936,
place = {Japan}, title = {Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond}, url = {https://par.nsf.gov/biblio/10081936}, DOI = {10.1103/PhysRevB.98.235140}, abstractNote = {Not Available}, journal = {Physical Review B}, volume = {98}, number = {23}, publisher = {American Physical Society}, author = {Rose, B. C. and Thiering, G. and Tyryshkin, A. M. and Edmonds, A. M. and Markham, M. L. and Gali, A. and Lyon, S. A. and de Leon, N. P.}, }