Photogating and high gain in ReS 2 field-effect transistors
- Award ID(s):
- 1807969
- NSF-PAR ID:
- 10089728
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 124
- Issue:
- 20
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- 204306
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation