skip to main content


Title: Photogating and high gain in ReS 2 field-effect transistors
Award ID(s):
1807969
NSF-PAR ID:
10089728
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
124
Issue:
20
ISSN:
0021-8979
Page Range / eLocation ID:
204306
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Spontaneous Ge6O8cluster formation under ambient conditions using dispersion enhanced aryloxo ligands.

     
    more » « less