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  • Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
Title: Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
NSF-PAR ID:
10091338
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
American Physical Society
Date Published:
Journal Name:
Physical Review Applied
Volume:
11
Issue:
4
ISSN:
2331-7019; PRAHB2
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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