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  • Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS 2 Transistors
Title: Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS 2 Transistors
Award ID(s):
1638598
PAR ID:
10094910
Author(s) / Creator(s):
;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
65
Issue:
10
ISSN:
0018-9383
Page Range / eLocation ID:
4084 to 4092
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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