Kumar, Rahul, Maidaniuk, Yurii, Kuchuk, Andrian, Saha, Samir K., Ghosh, Pijush K., Mazur, Yuriy I., Ware, Morgan E., and Salamo, Gregory J. Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix. Retrieved from https://par.nsf.gov/biblio/10095187. Journal of Applied Physics 124.23 Web. doi:10.1063/1.5053412.

Kumar, Rahul, Maidaniuk, Yurii, Kuchuk, Andrian, Saha, Samir K., Ghosh, Pijush K., Mazur, Yuriy I., Ware, Morgan E., & Salamo, Gregory J. Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix. Journal of Applied Physics, 124 (23). Retrieved from https://par.nsf.gov/biblio/10095187. https://doi.org/10.1063/1.5053412

Kumar, Rahul, Maidaniuk, Yurii, Kuchuk, Andrian, Saha, Samir K., Ghosh, Pijush K., Mazur, Yuriy I., Ware, Morgan E., and Salamo, Gregory J. "Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix". Journal of Applied Physics 124 (23). Country unknown/Code not available. https://doi.org/10.1063/1.5053412. https://par.nsf.gov/biblio/10095187.

@article{osti_10095187,
place = {Country unknown/Code not available}, title = {Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix}, url = {https://par.nsf.gov/biblio/10095187}, DOI = {10.1063/1.5053412}, abstractNote = {}, journal = {Journal of Applied Physics}, volume = {124}, number = {23}, author = {Kumar, Rahul and Maidaniuk, Yurii and Kuchuk, Andrian and Saha, Samir K. and Ghosh, Pijush K. and Mazur, Yuriy I. and Ware, Morgan E. and Salamo, Gregory J.}, }