Kim, Jieun, Takenaka, Hiroyuki, Qi, Yubo, Damodaran, Anoop R., Fernandez, Abel, Gao, Ran, McCarter, Margaret R., Saremi, Sahar, Chung, Linh, Rappe, Andrew M., and Martin, Lane W.. Epitaxial Strain Control of Relaxor Ferroelectric Phase Evolution. Retrieved from https://par.nsf.gov/biblio/10096041. Advanced Materials 31.21 Web. doi:10.1002/adma.201901060.

Kim, Jieun, Takenaka, Hiroyuki, Qi, Yubo, Damodaran, Anoop R., Fernandez, Abel, Gao, Ran, McCarter, Margaret R., Saremi, Sahar, Chung, Linh, Rappe, Andrew M., & Martin, Lane W.. Epitaxial Strain Control of Relaxor Ferroelectric Phase Evolution. Advanced Materials, 31 (21). Retrieved from https://par.nsf.gov/biblio/10096041. https://doi.org/10.1002/adma.201901060

Kim, Jieun, Takenaka, Hiroyuki, Qi, Yubo, Damodaran, Anoop R., Fernandez, Abel, Gao, Ran, McCarter, Margaret R., Saremi, Sahar, Chung, Linh, Rappe, Andrew M., and Martin, Lane W.. "Epitaxial Strain Control of Relaxor Ferroelectric Phase Evolution". Advanced Materials 31 (21). Country unknown/Code not available. https://doi.org/10.1002/adma.201901060. https://par.nsf.gov/biblio/10096041.

@article{osti_10096041,
place = {Country unknown/Code not available}, title = {Epitaxial Strain Control of Relaxor Ferroelectric Phase Evolution}, url = {https://par.nsf.gov/biblio/10096041}, DOI = {10.1002/adma.201901060}, abstractNote = {}, journal = {Advanced Materials}, volume = {31}, number = {21}, author = {Kim, Jieun and Takenaka, Hiroyuki and Qi, Yubo and Damodaran, Anoop R. and Fernandez, Abel and Gao, Ran and McCarter, Margaret R. and Saremi, Sahar and Chung, Linh and Rappe, Andrew M. and Martin, Lane W.}, }