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1. Crystal and Electronic Structure and Optical Properties of AE 2 SiP 4 ( AE = Sr, Eu, Ba) and Ba 4 Si 3 P 8

   https://doi.org/10.1002/zaac.201800430  

   Mark, Justin ; Dolyniuk, Juli‐Anna ; Tran, Nhon ; Kovnir, Kirill ( November 2018 , Zeitschrift für anorganische und allgemeine Chemie)

   Three new compounds in theAE‐Si‐P (AE= Sr, Eu, Ba) systems are reported. Sr₂SiP₄and Eu₂SiP₄, the first members of their respective ternary systems, are isostructural to previously reported Ba₂SiP₄and crystallize in the noncentrosymmetricI42d(no. 122) space group. Ba₄Si₃P₈crystallizes in the new structure type, inP2₁/c(no. 14) space group,mP‐120 Pearson symbol, Wyckoff sequencee³⁰. In the crystal structures of Sr₂SiP₄and Eu₂SiP₄all SiP₄tetrahedral building blocks are connected via formation of P–P bonds forming a three‐dimensional framework. In the crystal structure of Ba₄Si₃P₈, Si‐P tetrahedral chains formed by corner‐sharing, edge‐sharing, and P–P bonds are surrounded by Ba cations. This results in a quasi‐one‐dimensional structure. Electronic structure calculations and UV/Vis measurements suggest that theAE₂SiP₄(AE= Sr, Eu, Ba) are direct bandgap semiconductors with bandgaps of ca. 1.4 eV and have potential for thermoelectric applications.

    

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2. Interfacial Superconductivity Achieved in Parent AEFe 2 As 2 (AE = Ca, Sr, Ba) by a Simple and Realistic Annealing Route

   https://doi.org/10.1021/acs.nanolett.0c04995  

   Huyan, Shuyuan ; Lyu, Yanfeng ; Wang, Hua ; Deng, Liangzi ; Wu, Zheng ; Lv, Bing ; Zhao, Kui ; Tian, Fei ; Gao, Guanhui ; Liu, Rui-Zhe ; et al ( March 2021 , Nano Letters)

   null (Ed.)
3. Quantum-vibrational-state-selected Integral Cross Sections and Product Branching Ratios for the Ion-molecule Reactions of N 2 + ( X 2 Σ g + ; v + = 0–2) + H 2 O and H 2 O + ( X 2 B 1 : v 1 + v 2 + v 3 + = 000 and 100) + N 2 in the Collision Energy Range of 0.04–10.00 eV

   https://doi.org/10.3847/1538-4357/aac9bf  

   Xu, Yuntao ; Xiong, Bo ; Chang, Yih Chung ; Ng, Cheuk-Yiu ( July 2018 , The Astrophysical Journal)
4. Kinetics of the Topochemical Transformation of (PbSe) m (TiSe 2 ) n (SnSe 2 ) m (TiSe 2 ) n to (Pb 0.5 Sn 0.5 Se) m (TiSe 2 ) n

   https://doi.org/10.1021/jacs.8b10681  

   Sutherland, Duncan R. ; Merrill, Devin R. ; Ditto, Jeffrey ; Moore, Daniel B. ; Medlin, Douglas ; Johnson, David C. ( January 2019 , Journal of the American Chemical Society)
5. Sr(Ag 1−x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1−x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

   https://doi.org/10.1002/ange.202301191  

   Zhou, Xiuquan ; Wilfong, Brandon ; Chen, Xinglong ; Laing, Craig ; Pandey, Indra R. ; Chen, Ying‐Pin ; Chen, Yu‐Sheng ; Chung, Duck‐Young ; Kanatzidis, Mercouri G. ( February 2023 , Angewandte Chemie)

   Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag_1−xLi_x)₂Se₂layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag_1−xLi_x)₂Se₂withxup to 0.45. In addition, a new type of intergrowth compound [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] was synthesized upon further reaction of Sr(Ag_1−xLi_x)₂Se₂with SrSe. Both Sr(Ag_1−xLi_x)₂Se₂and [Sr₃Se₂][(Ag_1−xLi_x)₂Se₂] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag_1−xLi_x)₂Se₂can be precisely tuned via fine‐tuningxthat is controlled by only the flux ratio and temperature.

    

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