Liu, Shiyi, DeWeerd, Nicholas J., Reeves, Brian J., San, Long K., Dahal, Drona, Radha Krishnan, Raj Kishen, Strauss, Steven H., Boltalina, Olga V., and Lüssem, Björn. Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene. Retrieved from https://par.nsf.gov/biblio/10096518. Advanced Electronic Materials . Web. doi:10.1002/aelm.201900109.

Liu, Shiyi, DeWeerd, Nicholas J., Reeves, Brian J., San, Long K., Dahal, Drona, Radha Krishnan, Raj Kishen, Strauss, Steven H., Boltalina, Olga V., & Lüssem, Björn. Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene. Advanced Electronic Materials, (). Retrieved from https://par.nsf.gov/biblio/10096518. https://doi.org/10.1002/aelm.201900109

Liu, Shiyi, DeWeerd, Nicholas J., Reeves, Brian J., San, Long K., Dahal, Drona, Radha Krishnan, Raj Kishen, Strauss, Steven H., Boltalina, Olga V., and Lüssem, Björn. "Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene". Advanced Electronic Materials (). Country unknown/Code not available. https://doi.org/10.1002/aelm.201900109. https://par.nsf.gov/biblio/10096518.

@article{osti_10096518,
place = {Country unknown/Code not available}, title = {Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene}, url = {https://par.nsf.gov/biblio/10096518}, DOI = {10.1002/aelm.201900109}, abstractNote = {}, journal = {Advanced Electronic Materials}, author = {Liu, Shiyi and DeWeerd, Nicholas J. and Reeves, Brian J. and San, Long K. and Dahal, Drona and Radha Krishnan, Raj Kishen and Strauss, Steven H. and Boltalina, Olga V. and Lüssem, Björn}, }