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Title: Doped N‐Type Organic Field‐Effect Transistors Based on Faux‐Hawk Fullerene
Authors:
; ; ; ; ; ; ; ;
Award ID(s):
1709479
Publication Date:
NSF-PAR ID:
10096518
Journal Name:
Advanced Electronic Materials
Page Range or eLocation-ID:
1900109
ISSN:
2199-160X
Sponsoring Org:
National Science Foundation
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