skip to main content

Explore Research Products in the NSF-PAR

Title: Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM
Award ID(s):
1810119
NSF-PAR ID:
10100334
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
ACS Applied Materials & Interfaces
Volume:
11
Issue:
12
ISSN:
1944-8244
Page Range / eLocation ID:
11579 to 11586
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email