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1. A z = 0 Multiwavelength Galaxy Synthesis. I. A WISE and GALEX Atlas of Local Galaxies

   https://doi.org/10.3847/1538-4365/ab3925  

   Leroy, Adam K.; Sandstrom, Karin M.; Lang, Dustin; Lewis, Alexia; Salim, Samir; Behrens, Erica A.; Chastenet, Jérémy; Chiang, I-Da; Gallagher, Molly J.; Kessler, Sarah; et al (October 2019, The Astrophysical Journal Supplement Series)
2. A Chandra survey of z ≥ 4.5 quasars

   https://doi.org/10.1093/mnras/stab1042  

   Li, Jiang-Tao; Wang, Feige; Yang, Jinyi; Bregman, Joel N; Fan, Xiaohui; Zhang, Yuchen (May 2021, Monthly Notices of the Royal Astronomical Society)

   null (Ed.)

   ABSTRACT X-ray observations provide a unique probe of the accretion disc corona of supermassive black holes (SMBHs). In this paper, we present a uniform Chandra X-ray data analysis of a sample of 152 z ≥ 4.5 quasars. We firmly detect 46 quasars of this sample in 0.5–2 keV above 3σ and calculate the upper limits of the X-ray flux of the remaining. We also estimate the power-law photon index of the X-ray spectrum of 31 quasars. 24 of our sample quasars are detected in the FIRST or NVSS radio surveys; all of them are radio-loud. We statistically compare the X-ray properties of our z ≥ 4.5 quasars to other X-ray samples of active galactic nuclei (AGNs) at different redshifts. The relation between the rest-frame X-ray luminosity and other quasar parameters, such as the bolometric luminosity, UV luminosity, or SMBH mass, shows large scatters. These large scatters can be attributed to the narrow luminosity range at the highest redshift, the large measurement error based on relatively poor X-ray data, and the inclusion of radio-loud quasars in the sample. The LX–LUV relationship is significantly sublinear. We do not find a significant redshift evolution of the LX–LUV relation, expressed either in the slope of this relation, or the departure of individual AGNs from the best-fitting αOX–LUV relation (ΔαOX). The median value of the X-ray photon index is Γ ≈ 1.79, which does not show redshift evolution from z = 0 to z ∼ 7. The X-ray and UV properties of the most distant quasars could potentially be used as a standard candle to constrain cosmological models. The large scatter of our sample on the Hubble diagram highlights the importance of future large unbiased deep X-ray and radio surveys in using quasars in cosmological studies. 

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3. Agrobacterium tumefaciens –Mediated Transformation of Three Milkweed Species ( Asclepias hallii , A. syriaca , and A . tuberosa : Apocynaceae)

   https://doi.org/10.1002/cppb.20105  

   Keen, Patricia; Hastings, Amy Picard; Agrawal, Anurag A.; Van Eck, Joyce (February 2020, Current Protocols in Plant Biology)
4. Growth of a -plane BaTiO3 on a -plane β -Ga2O3 by molecular-beam epitaxy

   https://doi.org/10.1063/5.0302145  

   Azizie, Kathy; Pieczulewski, Naomi A; Parker, Nicholas A; Li, Jian V; Hendricks, Nolan S; Liddy, Kyle J; Birkhölzer, Yorick A; Welp, Eric A; Omodt, Luke; Asel, Thaddeus J; et al (January 2026, APL Materials)

   We demonstrate the epitaxial growth of single-phase (100) BaTiO3 films on (100) β-Ga2O3 substrates at substrate temperatures ranging from 600 to 700 °C using molecular-beam epitaxy. Characterization of a 47 nm thick BaTiO3 film by atomic force microscopy reveals a step-and-terrace morphology with unit-cell-high BaTiO3 steps and an rms surface roughness of 0.26 nm. Scanning transmission electron microscopy (STEM) images show that in some regions the β-Ga2O3 substrate terminates with a (100)A plane as it transitions to BaTiO3 and in other regions with a (100)B plane. The (100) BaTiO3 films are fully relaxed and consist of a mixture of two types of a-axis domains: a1 and a2. The orientation relationship determined by X-ray diffraction and confirmed by STEM is (100) BaTiO3 || (100) β-Ga2O3 and [011] BaTiO3||[010] β-Ga2O3. Despite the average linear lattice mismatch of 3.8%, BaTiO3 films with rocking curve full width at half maximum widths as narrow as 28 arc sec are achieved. From capacitance–voltage measurements on a metal–oxide–semiconductor capacitor structure with a-axis BaTiO3 as the oxide layer and Si-doped β-Ga2O3 as the semiconducting layer, we extract a dielectric constant of K11 = 670 for the BaTiO3 epitaxially integrated with (100) β-Ga2O3. We anticipate that this high-K epitaxial dielectric will be useful for electric-field management in β-Ga2O3-based device structures. 

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5. Temperature-dependent dielectric behavior of A 6 B 2O17 ( A  = Zr, Hf; B  = Nb, Ta) phases

   https://doi.org/10.1063/5.0219964  

   Spurling, R Jackson; Marakovits, Michael T; Hossain, Arafat; Almishal, Saeed_S I; Perini, Steven E; Lanagan, Michael T; Maria, Jon-Paul (August 2024, Applied Physics Letters)

   We report on temperature-dependent dielectric behavior of disordered ternary A6B2O17 (A = Zr, Hf; B = Nb, Ta)-form oxides in the GHz frequency range. The microwave dielectric properties including relative permittivity, dielectric loss, and temperature-dependent relative permittivity were characterized using cylindrical dielectric resonators using a resonant post measurement technique. Dielectric measurements through the resonant post method approach generally agree with dielectric measurements of A6B2O17 bulk ceramics measured through standard resonant post techniques. Coefficients describing the temperature-dependent relative permittivity for ternary A6B2O17 phases are strongly positive, suggesting contributions to polarizability arising from long-range mechanisms potentially associated with structural disorder. These observations support the working hypothesis that material functionality can be engineered by the chemical diversity and structural disorder possible in high configurational entropy A6B2O17 phases. 

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