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Title: Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
Authors:
; ; ; ; ; ; ; ; ;
Award ID(s):
1807984
Publication Date:
NSF-PAR ID:
10101621
Journal Name:
Physical Review Materials
Volume:
3
Issue:
5
ISSN:
2475-9953; PRMHAR
Publisher:
American Physical Society
Sponsoring Org:
National Science Foundation
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