Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., and Mi, Z. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. Physical Review Materials 3.5 Web. doi:10.1103/PhysRevMaterials.3.053401.

Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., & Mi, Z. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. Physical Review Materials, 3 (5). https://doi.org/10.1103/PhysRevMaterials.3.053401

Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., and Mi, Z. "Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy". Physical Review Materials 3 (5). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.3.053401. https://par.nsf.gov/biblio/10101621.

@article{osti_10101621,
place = {Country unknown/Code not available}, title = {Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy}, url = {https://par.nsf.gov/biblio/10101621}, DOI = {10.1103/PhysRevMaterials.3.053401}, abstractNote = {Not Available}, journal = {Physical Review Materials}, volume = {3}, number = {5}, publisher = {American Physical Society}, author = {Pandey, A. and Liu, X. and Deng, Z. and Shin, W. J. and Laleyan, D. A. and Mashooq, K. and Reid, E. T. and Kioupakis, E. and Bhattacharya, P. and Mi, Z.}, }