skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


  • NSF Public Access
  • Search Results
  • Deep level defects in β-Ga 2 O 3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques
Title: Deep level defects in β-Ga 2 O 3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques
Award ID(s):
1800130
PAR ID:
10104797
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
125
Issue:
10
ISSN:
0021-8979
Page Range / eLocation ID:
105103
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; (, Inorganic Chemistry)
  2. ; ; ; ; (, Inorganic Chemistry)
  3. ; ; ; ; (, European Journal of Inorganic Chemistry)
    null (Ed.)
  4. ; ; (, The Journal of Physical Chemistry A)
  5. ; ; ; ; ; ; ; (, 2022 47th International Conference of Infrared, Millimeter and Terahertz Waves)
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email