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Title: MOCVD homoepitaxy of Si-doped (010) β-Ga 2 O 3 thin films with superior transport properties
Award ID(s):
1810041
PAR ID:
10105817
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
114
Issue:
25
ISSN:
0003-6951
Page Range / eLocation ID:
250601
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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