MOCVD homoepitaxy of Si-doped (010) β-Ga 2 O 3 thin films with superior transport properties
- Award ID(s):
- 1810041
- NSF-PAR ID:
- 10105817
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 114
- Issue:
- 25
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 250601
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation