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Title: Size Effects on the Cross-Plane Thermal Conductivity of Transparent Conducting Indium Tin Oxide and Fluorine Tin Oxide Thin Films
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Author(s) / Creator(s):
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Date Published:
Journal Name:
IEEE Transactions on Components, Packaging and Manufacturing Technology
Page Range / eLocation ID:
51 to 57
Medium: X
Sponsoring Org:
National Science Foundation
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  1. The development of novel materials is essential for the next generation of electric vehicles and portable devices. Tin oxide (SnO2), with its relatively high theoretical capacity, has been considered as a promising anode material for applications in energy storage devices. However, the SnO2 anode material suffers from poor conductivity and huge volume expansion during charge/discharge cycles. In this study, we evaluated an approach to control the conductivity and volume change of SnO2 through a controllable and effective method by confining different percentages of SnO2 nanoparticles into carbon nanotubes (CNTs). The binder-free confined SnO2 in CNT composite was deposited via an electrostatic spray deposition technique. The morphology of the synthesized and deposited composite was evaluated by scanning electron microscopy and high-resolution transmission electron spectroscopy. The binder-free 20% confined SnO2 in CNT anode delivered a high reversible capacity of 770.6 mAh g−1. The specific capacity of the anode increased to 1069.7 mAh g−1 after 200 cycles, owing to the electrochemical milling effect. The delivered specific capacity after 200 cycles shows that developed novel anode material is suitable for lithium-ion batteries (LIBs). 
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  2. null (Ed.)
    Abstract Disorder arising from random locations of charged donors and acceptors introduces localization and diffusive motion that can lead to constructive electron interference and positive magnetoconductivity. At very low temperatures, 3D theory predicts that the magnetoconductivity is independent of temperature or material properties, as verified for many combinations of thin-films and substrates. Here, we find that this prediction is apparently violated if the film thickness d is less than about 300 nm. To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T  = 15 – 150 K in ten, Sn-doped In 2 O 3 films with d  = 13 – 292 nm, grown by pulsed laser deposition on fused silica. We observe a very strong thickness dependence which we explain by introducing a theory that postulates a second source of disorder, namely, non-uniform interface-induced defects whose number decreases exponentially with the interface distance. This theory obeys the 3D limit for the thickest samples and yields a natural figure of merit for interface disorder. It can be applied to any degenerate semiconductor film on any semi-insulating substrate. 
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