High Aspect Ratio β-Ga 2 O 3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
- Award ID(s):
- 1809946
- NSF-PAR ID:
- 10108874
- Date Published:
- Journal Name:
- ACS Nano
- ISSN:
- 1936-0851
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation